Le parti elettroniche : BUL642D2G

Produttore : Semiconductor

Imballaggio :

Pins :

Descrizione : High Speed, High Gain Bipolar Transistor with Integrated Collector−Emitter Built−in Efficient Antisaturation Network

Temperatura : Min °C | Max °C

Datasheet : BUL642D2G PDF

• BUL642D2
• BUL642D2G